Order codes STD2N80K5 STF2N80K5 STP2N80K5 STU2N80K5 VDS 800 V RDS(on)max 4.5 Ω ID 2A PTOT 45 W 20 W 45 W
* Industry’s lowest RDS(on) * area
* Industry’s bes.

* Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are desi.

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring s.

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