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STU7N80K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS STD7N80K5 STP7N80K5 800 V STU7N80K5.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max ID 1.2 Ω 6A.

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Full PDF Text Transcription for STU7N80K5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STU7N80K5. For precise diagrams, and layout, please refer to the original PDF.

STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TAB TAB TO-220 1 23 IPA...

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in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TAB TAB TO-220 1 23 IPAK 123 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS STD7N80K5 STP7N80K5 800 V STU7N80K5 • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on) max ID 1.2 Ω 6A Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiri

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