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STU7NB90I - N-channel Power MOSFET

Download the STU7NB90I datasheet PDF. This datasheet also covers the STU7NB90 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STU7NB90_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STU7NB90 N-channel Power MOSFET
STU7NB100 N-channel Power MOSFET
STU7N105K5 N-channel Power MOSFET
STU7N60M2 N-channel Power MOSFET
STU7N65M2 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh™ MOSFET TYPE STU7NB90 STU7NB90I www.DataSheet4U.com s s s s s s STU7NB90 STU7NB90I VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 7.3 A 7.3 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD 1 2 3 Max220 Max220I DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.