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STU8NC90Z Datasheet - STMicroelectronics

N-channel Power MOSFET

STU8NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STU8NC90Z General Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

STU8NC90Z Datasheet (335.68 KB)

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Datasheet Details

Part number:

STU8NC90Z

Manufacturer:

STMicroelectronics ↗

File Size:

335.68 KB

Description:

N-channel power mosfet.
N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU8NC90Z STU9NC90ZI s s s s s s STU8NC90Z STU8NC90ZI VDSS 90.

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STU8NC90Z N-channel Power MOSFET STMicroelectronics

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