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STMicroelectronics Electronic Components Datasheet

STU9NC90ZI Datasheet

N-channel Power MOSFET

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STU8NC90Z
STU8NC90ZI
N-CHANNEL 900V - 1.1- 7.6A Max220/I-Max220
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STU8NC90Z
www.DataSheet4U.cSoTmU9NC90ZI
900 V
900 V
< 1.38
< 1.38
7A
7A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
23
1
Max220
I-Max220
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(q) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Sep 2000
Value
STU8NC90Z
STU8NC90ZI
900
900
±25
7 7(*)
4.4 4.4(*)
28 28(*)
160
1.28
55
0.44
±50
4
3
-- 2000
–65 to 150
150
(1)ISD 7A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
1/10


STMicroelectronics Electronic Components Datasheet

STU9NC90ZI Datasheet

N-channel Power MOSFET

No Preview Available !

STU8NC90Z/STU8NC90ZI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Max220
I-Max220
0.78 2.27
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
www.DataSheet4U.com IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7
430
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
900
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
1
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.8A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
1.1
Max.
5
1.38
Unit
V
7A
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.8A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
9
3550
205
25
Max.
Unit
S
pF
pF
pF
2/10


Part Number STU9NC90ZI
Description N-channel Power MOSFET
Maker STMicroelectronics
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STU9NC90ZI Datasheet PDF






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