Datasheet Details
| Part number | STU9NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 84.25 KB |
| Description | N-channel Power MOSFET |
| Datasheet | STU9NA60_STMicroelectronics.pdf |
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Overview: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU9NA60 .. s TYPICAL s V DSS 600 V R DS(on) < 0.8 Ω ID 9A s s s s RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to acodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce ponent count in multiple paralleled TO-220 designs and save board space with respect to larger packages.
| Part number | STU9NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 84.25 KB |
| Description | N-channel Power MOSFET |
| Datasheet | STU9NA60_STMicroelectronics.pdf |
|
|
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Max220TM INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max.
Operating Junction Temperature o o Value 600 600 ± 30 9 5.7 36 145 1.16 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area March 1996 1/5 STU9NA60 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.86 30 0.1 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol I AR ..
Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50
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