STW12N150K5 Datasheet | STMicroelectronics

N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5 Power MOSFET in a TO-247 package - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W - Industry’s lowest RDS(on) - area - Industry’s best figure of merit (Fo M) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STW12N150K5 Table 1: Device summary Marking 12N150K5 Package TO-247 Packing Tube July 2015 Doc ID027833 Rev 3 This is information on a product in full production. 1/13...