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STW12N170K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS RDS(on) max. ID STW12N170K5 1700 V 2.9 Ω 5A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • Zener-protected PTOT 250 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW12N170K5 Datasheet N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh K5 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STW12N170K5 1700 V 2.9 Ω 5A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • Zener-protected PTOT 250 W Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.