Datasheet Summary
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5
Power MOSFET in a TO-247 package
- production data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID PTOT
STW12N150K5 1500 V
1.9 Ω
7 A 250 W
- Industry’s lowest RDS(on)
- area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring...