Datasheet4U Logo Datasheet4U.com

STW13NB60FI - N - CHANNEL PowerMESH MOSFET

Download the STW13NB60FI datasheet PDF. This datasheet also covers the STW13NB60 variant, as both devices belong to the same n - channel powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW13NB60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STW13N95K3 Power MOSFETs ST Microelectronics
STW13NK50Z Power MOSFETs ST Microelectronics
STW13NK60Z N-channel Power MOSFET ST Microelectronics
STW13NM60N N-Channel MOSFET INCHANGE
STW130NS04ZB N-channel Power MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STW13NB60 N - CHANNEL PowerMESH MOSFET
STW13N60M2 N-channel Power MOSFET
STW13N80K5 N-channel Power MOSFET
STW13NK100Z N-CHANNEL Power MOSFET
STW13NK80Z N-CHANNEL Power MOSFET

Full PDF Text Transcription

Click to expand full text
® STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W13NB60 ST H13NB60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS(on) <0.54 Ω <0.54 Ω ID 13 A 8.6 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Published: |