STW28N60DM2 Datasheet | STMicroelectronics

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages - production data Features Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing D²PAK Tape and...