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STW47NM60ND - N-CHANNEL MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • 3 2 1 TO-247 Figure 1. Internal schematic diagram Order code VDS @ TJMAX RDS(on) max ID STW47NM60ND 650 V 0.088 Ω 35 A.
  • Designed for automotive.

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Full PDF Text Transcription

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STW47NM60ND Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet - production data Features 3 2 1 TO-247 Figure 1. Internal schematic diagram Order code VDS @ TJMAX RDS(on) max ID STW47NM60ND 650 V 0.088 Ω 35 A • Designed for automotive applications and AEC-Q101 qualified • The worldwide best RDS(on)*area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities. $ Applications • Switching applications ' 3 !-V Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
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