STW65N023M9-4 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STW65N023M9-4
Manufacturer	STMicroelectronics
File Size	427.83 KB
Description	N-channel Power MOSFET
Datasheet	STW65N023M9-4 Datasheet
Additional preview pages of the STW65N023M9-4 datasheet.

Product details

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

Features

Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92.
Worldwide best FOM RDS(on).
Qg among silicon-based devices.
Higher VDSS rating.
Higher dv/dt capability.
Excellent switching performance thanks to the extra driving source pin.
Easy to drive.
100% avalanche tested Gate(4) Driver source(3).

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Published: Jun 26, 2023 |