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STW60N65M5 - N-CHANNEL MOSFET

General Description

duThe devices are N-channel MDmesh™ V Power roMOSFET based on an innovative proprietary Pvertical process technology, which is combined tewith STMicroelectronics’ well-known lePowerMESH™ horizontal layout structure.

Key Features

  • Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c.
  • Worldwide best RDS(on).
  • area amongst the usilicon based devices rod.
  • Higher VDSS rating P.
  • High dv/dt capability te.
  • Excellent switching performance le.
  • Easy to drive so.
  • 100% avalanche tested Ob.

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Full PDF Text Transcription (Reference)

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STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF Features Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c■ Worldwide best RDS(on) * area amongst the usilicon based devices rod■ Higher VDSS rating P■ High dv/dt capability te■ Excellent switching performance le■ Easy to drive so■ 100% avalanche tested ObApplication ) -Switching applications ct(sDescription duThe devices are N-channel MDmesh™ V Power roMOSFET based on an innovative proprietary Pvertical process technology, which is combined tewith STMicroelectronics’ well-known lePowerMESH™ horizontal layout structure.