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STW65N023M9-4 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STW65N023M9-4 Datasheet N-channel 650 V, 19.9 mΩ typ., 92 A MDmesh M9 Power MOSFET in a TO247-4 package 2 34 1 TO247-4 Drain(1,.

General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Key Features

  • Order code VDS RDS(on) max. ID STW65N023M9-4 650 V 23.0 mΩ 92.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance thanks to the extra driving source pin.
  • Easy to drive.
  • 100% avalanche tested Gate(4) Driver source(3).

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