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STW65N65DM2AG - N-CHANNEL MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

  • Order code STW65N65DM2AG VDS 650 V RDS(on) max. 0.05 Ω ID PTOT 60 A 446 W.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW65N65DM2AG VDS 650 V RDS(on) max. 0.05 Ω ID PTOT 60 A 446 W • Designed for automotive applications and AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.