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STW68N65DM6-4AG - N-Channel MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Order code STW68N65DM6-4AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB).
  • Designed for automotive.

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STW68N65DM6-4AG Datasheet Automotive N-channel 650 V, 33 mΩ typ., 72 A MDmesh DM6 Power MOSFET in a TO247‑4 package Features Order code STW68N65DM6-4AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) • Designed for automotive applications • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Excellent switching performance thanks to the extra driving source pin • Zener-protected Power source (2) AM10177v2Z Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.