STMicroelectronics STW68N65DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.FEATURES
Order code VDS RDS(on) max ID STW68N65DM6 650 V 59 mΩ 55 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW68N65DM6 Product summary Order code STW68N65DM6 Marking 68N65DM6 Package TO-247 Packing Tube DS13331 - Rev 3 - May 2021 For further information contact your local STMicroelectronics sales office. STW68N65DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drai...