STW68N65DM6 Key Features
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
| Part Number | Description |
|---|---|
| STW68N65DM6-4AG | N-Channel MOSFET |
| STW68N60M6 | N-CHANNEL POWER MOSFET |
| STW68N60M6-4 | N-CHANNEL POWER MOSFET |
| STW60N65M5 | N-CHANNEL MOSFET |
| STW60NM50N | N-CHANNEL MOSFET |