STW68N65DM6 Datasheet - STMicroelectronics

N-channel Power MOSFET

STW68N65DM6 Features

* Order code VDS RDS(on) max ID STW68N65DM6 650 V 59 mΩ 55 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

STW68N65DM6 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STW68N65DM6 Datasheet (258.58 KB)

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Datasheet Details

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STW68N65DM6

Manufacturer:

STMicroelectronics ↗

File Size:

258.58 KB

Description:

N-channel power mosfet.
STW68N65DM6 Datasheet N-channel 650 V, 51 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab .

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STW68N65DM6 Features

STW68N65DM6 General Description

Datasheet Details

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