STW68N65DM6-4AG Datasheet | STMicroelectronics

Automotive N-channel 650 V, 33 mΩ typ., 72 A MDmesh DM6 Power MOSFET in a TO247‑4 package Features Order code STW68N65DM6-4AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) - Designed for automotive applications - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Excellent switching performance thanks to the extra driving source pin - Zener-protected Power source (2) AM10177v2Z Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW68N65DM6-4AG Product summary Order code STW68N65DM6-4AG Marking 68N65DM6AG Package TO247-4...