STW68N65DM6 Datasheet | STMicroelectronics

N-channel 650 V, 51 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code RDS(on) max 650 V 59 mΩ 55 A - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW68N65DM6 Product summary Order code Marking 68N65DM6 Package TO-247...