* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
STW8NC90Z Datasheet (208.82 KB)
STW8NC90Z
208.82 KB
N-channel enhancement mode power mos transistors.
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC90Z www.DataSheet4U.com s TYPICAL s STW8NC90Z VDSS 900 V RDS(o.
📁 Related Datasheet
STW8NC70Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (STMicroelectronics)
STW8NC80Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (STMicroelectronics)
STW8N120K5 N-channel Power MOSFET (STMicroelectronics)
STW8N80 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (STMicroelectronics)
STW8N90K5 N-channel Power MOSFET (STMicroelectronics)
STW8NA60 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (STMicroelectronics)
STW8NA80 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (STMicroelectronics)
STW8NB100 N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET (ST Microelectronics)
STW8NB80 N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET (ST Microelectronics)
STW8NB90 N-CHANNEL MOSFET (ST Microelectronics)
