Datasheet4U Logo Datasheet4U.com

STWA50N65DM2AG - N-CHANNEL POWER MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code STWA50N65DM2AG VDS 650 V RDS(on) max. 0.087 Ω ID 38 A PTOT 300 W Figure 1: Internal schematic diagram D(2).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STWA57N65M5 N-Channel MOSFET INCHANGE
STWA45N65M5 N-Channel MOSFET INCHANGE
STW-195 Retaining Ring Spec Sheet AmericanRing
STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics
STW10NB60 N-CHANNEL Power MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STWA57N65M5 N-channel Power MOSFET
STWA12N120K5 N-channel 1200V 12A Power MOSFET
STWA20N95DK5 N-channel Power MOSFET
STWA20N95K5 N-CHANNEL MOSFET
STWA30N65DM6AG Automotive-grade N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STWA50N65DM2AG Automotive-grade N-channel 650 V, 0.070 Ω typ., 38 A Power MOSFET MDmesh™ DM2 in TO-247 long leads package Datasheet - production data Features Order code STWA50N65DM2AG VDS 650 V RDS(on) max. 0.087 Ω ID 38 A PTOT 300 W Figure 1: Internal schematic diagram D(2)  AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications G(1) S(3) Order code STWA50N65DM2AG Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
Published: |