STY100NM60N Key Features
- production data
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Part: STY100NM60N
- Manufacturer: STMicroelectronics (official site)
- Size: 383.17 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STY105NM50N | N-CHANNEL POWER MOSFET |
| STY112N65M5 | N-channel Power MOSFET |
| STY130NF20D | N-channel Power MOSFET |
| STY139N65M5 | N-channel Power MOSFET |
| STY145N65M5 | N-channel Power MOSFET |
STY100NM60N Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.