STMicroelectronics STY105NM50N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STY105NM50N |
|---|---|
| Datasheet | STY105NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
3 2 1 Max247 Figure 1. Internal schematic diagram ' * 6 Order code STY105NM50N VDSS @TjMAX 550 V RDS(on) max < 0.022 Ω ID 110 A● Max247 worldwide best RDS(on)
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. $0 Y Order code STY105NM50N Table 1. Device summary Marking Package 105NM50N Max247 July 2013 This is information on a product in full production. Doc ID 022226 Rev 3 Packagin
