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STY100NM60N - N-CHANNEL Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • N-channel 600 V, 0.028 Ω typ. , 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet.
  • production data Type STY100NM60N VDSS @ TJmax 650 V RDS(on) max < 0.029 Ω ID 98 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – STY100NM60N

Datasheet Details

Part number STY100NM60N
Manufacturer STMicroelectronics
File Size 383.17 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STY100NM60N Datasheet
Additional preview pages of the STY100NM60N datasheet.

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Full PDF Text Transcription

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STY100NM60N Features N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet — production data Type STY100NM60N VDSS @ TJmax 650 V RDS(on) max < 0.029 Ω ID 98 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 Max247 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1.
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