STMicroelectronics STY100NM60N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
FEATURES
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet — production data Type STY100NM60N VDSS @ TJmax 650 V RDS(on) max < 0.029 Ω ID 98 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. 3 2 1 Max247 Figure 1. Internal schematic diagram $ ' 3 !- V Table 1. Device summary Order code STY100NM60N Marking 100NM60N Package Max247 Packaging Tube November 2012 This is information on a product in full production. Doc ID 022225 Rev 2 1/13 13 Contents Contents STY100NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .