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T1635T-8G Key Features
- High static dV/dt
- High dynamic turn-off mutation (dl/dt)c
- 150 °C maximum junction temperature
- Three quadrants
- Surge capability VDSM, VRSM = 900 V
- Benefits
- High immunity to false turn-on thanks to high static dV/dt
- Improved turn-off in high temperature environments thanks higher (dI/dt)c
- Increase of thermal margin due to extended working Tj up to 150 °C
- Good thermal resistance due to non-insulated tab
Other T1635T-8G Datasheets
| Manufacturer |
Part Number |
Description |
Inchange Semiconductor |
T1635T-8I
|
Thyristor |
Inchange Semiconductor |
T1635T-8T
|
Thyristor |