With TO-220 packaging
Operating in 3 quadrants
High commutation capability
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Switching applications
Phase control
Static switching on inductive or resistive load
ABSOLUT
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isc Thyristors
INCHANGE Semiconductor
T1635T-8I
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
VDRM Repetitive peak off-state voltage
@Tc=125℃
800
VRRM IT(RSM)
Repetitive peak reverse voltage Average on-state current
ITSM Surge non-repetitive on-state current
@Tc=125℃ 800
@Tc=108℃
16
Tc=119℃
12
50Hz
120
60Hz
126
PG(AV) Average gate power dissipation ( over any 20 ms period )
1
Tj
Operating junction temperature
-40~150
Tstg Storage temperature
-40~150
UNIT
V V A A W ℃ ℃
ELECTRICAL CH
T1635T-8I Datasheet
