Datasheet Details
| Part number | T1635T-8T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.13 KB |
| Description | Thyristor |
| Datasheet | T1635T-8T-INCHANGE.pdf |
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Overview: isc Thyristors T1635T-8T.
| Part number | T1635T-8T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.13 KB |
| Description | Thyristor |
| Datasheet | T1635T-8T-INCHANGE.pdf |
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·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=15℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 16 A 120 126 A 1.0 W -40~150 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=25℃ Tj=125℃ Tj=150℃ 0.008 1.0 mA 3.0 VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.6A VD =12V;RG=30Ω VD =12V;RG=30Ω Half cycle Ⅰ 1.75 Ⅱ 1.75 Ⅲ 1.75 1.55 35 35 35 1.3 1.1 V mA V ℃/W isc website：.iscsemi.
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