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T1635T-6I Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors T1635T-6I.

General Description

·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=86℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 16 A 120 126 A 1.0 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;

IDRM Repetitive peak off-state current VD=VDRM Rated;

Tj=25℃ Tj=125℃ Tj=150℃ 0.005 1.0 mA 1.9 VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.6A VD =12V;RG=30Ω VD =12V;RG=30Ω Half cycle 1.55 V Ⅰ 35 Ⅱ 35 mA Ⅲ 35 1.3 V 2.1 ℃/W isc website:.iscsemi.

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