TN2010H-6T Description
Packaged in a non-isolated TO-220AB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. The bination of noise immunity and low gate triggering current allows to design strong and pact control circuit. Device summary Order code Package VDRM/VRRM IGT TN2010H-6T TO-220AB 600 V 10 mA August 2017 DocID030739 Rev 1 This is information on a pro.
TN2010H-6T Key Features
- High junction temperature: Tj = 150 °C
- Gate triggering current IGT = 10 mA
- Peak off-state voltage VDRM/VRRM = 600 V
- High turn on current rise dI/dt = 100 A/µs
- ECOPACK®2 pliant ponent