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W26NM50 - N-Channel MOSFET

General Description

MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.

Figure 1.

Key Features

  • Type STW26NM50 VDSS 500 V RDS(on) max < 0.12 Ω ID 30 A.
  • High dv/dt and avalanche capabilities.
  • Improved ESD capability.
  • Low input capacitance and gate charge.

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Full PDF Text Transcription for W26NM50 (Reference)

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STW26NM50 N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh™ Power MOSFET Features Type STW26NM50 VDSS 500 V RDS(on) max < 0.12 Ω ID 30 A ■ High dv/dt and avalanche capabilitie...

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V RDS(on) max < 0.12 Ω ID 30 A ■ High dv/dt and avalanche capabilities ■ Improved ESD capability ■ Low input capacitance and gate charge Application ■ Switching applications Description MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes STW26NM50 Marking W26NM50 3 !-V Package TO-247 Packaging Tube October 2009 Doc ID 8291

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