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FLM5359-35F - C-Band Internally Matched FET

Description

The FLM5359-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.

Features

  • High Output Power: P1dB=45.5dBm(Typ. ).
  • High Gain: G1dB=9.0dB(Typ. ).
  • High PAE: hadd=35%(Typ. ).
  • Broad Band: 5.3 to 5.9GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package.

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Datasheet preview – FLM5359-35F

Datasheet Details

Part number FLM5359-35F
Manufacturer SUMITOMO
File Size 374.07 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM5359-35F Datasheet
Additional preview pages of the FLM5359-35F datasheet.

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Full PDF Text Transcription

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FLM5359-35F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.3 to 5.9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5359-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115.4 -65 to +175 175 Limit <= 10 <= 107.2 >=-23.2 Unit V V W deg.C deg.C Unit V mA mA RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.
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