SPN1380 Overview
The SPN1380 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 800mA.
SPN1380 Key Features
- 50V/0.50A , RDS(ON)=1.6Ω@VGS=10V
- 50V/0.20A , RDS(ON)=2.5Ω@VGS=4.5V
- 50V/0.10A , RDS(ON)=4.5Ω@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- ESD protected
- SOT-23 package design