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SPN166T06 - N-Channel MOSFET

General Description

The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 60V/166A,RDS(ON)=3.0mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPN166T06
Manufacturer SYNC POWER
File Size 445.45 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN166T06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN166T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  60V/166A,RDS(ON)=3.0mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.