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SPN2318 - N-Channel MOSFET

General Description

The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 40V/3.9A,RDS(ON)=56mΩ@VGS=10V.
  • 40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V.
  • 40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design PIN.

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Datasheet Details

Part number SPN2318
Manufacturer SYNC POWER
File Size 359.24 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN2318 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  40V/3.9A,RDS(ON)=56mΩ@VGS=10V  40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V  40V/2.0A,RDS(ON)=95mΩ@VGS=2.