SPN2322 Datasheet, SYNC POWER

* 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
* 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
* 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.