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SPN2322 - Dual N-Channel MOSFET

General Description

The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V.
  • 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V.
  • 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TDFN2x2-6L package design.

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Datasheet Details

Part number SPN2322
Manufacturer SYNC POWER
File Size 529.91 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN2322 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN2322 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed . FEATURES  20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V  20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V  20V/2.0A,RDS(ON)=50mΩ@VGS=1.