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SPN2326 - N-Channel MOSFET

Description

The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • 100V/3A,RDS(ON)=310mΩ@VGS=10V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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Datasheet Details

Part number SPN2326
Manufacturer SYNC POWER
File Size 327.53 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN2326 Datasheet
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SPN2326 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/3A,RDS(ON)=310mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) 2020/02/21 Ver.
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