SPN2322 Datasheet | SYNC POWER

Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed . Features - 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V - 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V - 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TDFN2x2-6L package design APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter PIN CONFIGURATION(TDFN2x2- 6L) PART MARKING 2020/05/18 Ver.2 Page 1 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Exposed Backside Metal Symbol S1 G1 D2 S2 G2 D1 D1/D2 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 Drain ORDERING...