SPN2322 Overview
The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss,...
SPN2322 Key Features
- 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
- 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
- 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TDFN2x2-6L package design
SPN2322 Applications
- Power Management in Note book