SPN2326 Overview
The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN2326 Key Features
- 100V/3A,RDS(ON)=310mΩ@VGS=10V
- High density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design