SPN2N7002K mosfet equivalent, n-channel enhancement mode mosfet.
* 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V
* 60V/0.20A , RDS(ON)= 4.0Ω@VGS= 4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-res.
requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low vol.
The SPN2N7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perfo.
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