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SPN3004 Datasheet Preview

SPN3004 Datasheet

N-Channel Enhancement Mode MOSFET

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SPN3004
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3004 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
30V/96A,RDS(ON)=4.2mΩ@VGS=10V
30V/96A,RDS(ON)=6.0mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252-2L package design
APPLICATIONS
MB/VGA/Vcore
POL Applications
SMPS 2nd SR
High Frequency Synchronous Buck Converter
DC/DC Power System
Load Switch
PIN CONFIGURATION(TO-252-2L)
PART MARKING
2018/6/28 Ver 2
Page 1




SYNC POWER

SPN3004 Datasheet Preview

SPN3004 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SPN3004
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN3004T252RGB
TO-252-2L
SPN3004T252RGB : Tape Reel ; Pb Free; Halogen - Free
Part Marking
SPN3004
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=100
TA=25℃
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
PD
TJ
TSTG
RθJA
Typical
30
±20
96
68
192
53.8
317
93
-55/150
-55/150
62
Unit
V
V
A
A
A
mJ
W
℃/W
2018/6/28 Ver 2
Page 2


Part Number SPN3004
Description N-Channel Enhancement Mode MOSFET
Maker SYNC POWER
Total Page 8 Pages
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