SPN3006 - N-Channel MOSFET

SYNC POWER

General Description

The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Key Features

30V/80A,RDS(ON)=4.7mΩ@VGS=10V.
30V/80A,RDS(ON)=7.5mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TO-252-2L/TO-251S-3L package design PIN.

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SPN3006 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN3006
Manufacturer	SYNC POWER
File Size	446.76 KB
Description	N-Channel MOSFET
Datasheet	SPN3006 Datasheet

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SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  30V/80A,RDS(ON)=4.7mΩ@VGS=10V  30V/80A,RDS(ON)=7.5mΩ@VGS=4.