SPN3006 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - High Frequency Synchronous Buck Converter - DC/DC Power System - Load Switch Features - 30V/80A,RDS(ON)=4.7mΩ@VGS=10V - 30V/80A,RDS(ON)=7.5mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TO-252-2L/TO-251S-3L package design PIN CONFIGURATION TO-252-2L TO-251S-3L PART MARKING 2020/04/20 Ver 6 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN3006ST251TGB TO-251S-3L SPN3006T252RGB TO-252-2L...