SPN3004 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3004 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - 30V/96A,RDS(ON)=4.2mΩ@VGS=10V - 30V/96A,RDS(ON)=6.0mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TO-252-2L package design APPLICATIONS - MB/VGA/Vcore - POL Applications - SMPS 2nd SR - High Frequency Synchronous Buck Converter - DC/DC Power System - Load Switch PIN CONFIGURATION(TO-252-2L) PART MARKING 2020/04/28 Ver 3 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN3004T252RGB TO-252-2L ※ SPN3004T252RGB : Tape Reel ;...