SPN3458 Description
The SPN3458 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPN3458 Key Features
- 60V/5.0A,RDS(ON)=115mΩ@VGS=10V
- 60V/4.5A,RDS(ON)=125mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design
SPN3458 Applications
- Power Management in Note book