SPN4506 Description
The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN4506 Key Features
- 40V/10A,RDS(ON)=10mΩ@VGS=10V
- 40V/ 8A,RDS(ON)=12mΩ@VGS=4.5V
- 40V/ 6A,RDS(ON)=16mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design
SPN4506 Applications
- Power Management in Note book