SPN4856 mosfet equivalent, n-channel enhancement mode mosfet.
* 40V/8A,RDS(ON)=9mΩ@VGS=10V
* 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and .
* DC/DC Converter
* Load Switch
* Synchronous Buck Converter
* Charger Adapter
* LED Lighting
FEATU.
The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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