SPN4900 - N-Channel MOSFET

SYNC POWER

General Description

The SPN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

60V/5.3A,RDS(ON)=118mΩ@VGS=10V.
60V/4.7A,RDS(ON)=125mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOP.
8 package design.

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SPN4900 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN4900
Manufacturer	SYNC POWER
File Size	509.58 KB
Description	N-Channel MOSFET
Datasheet	SPN4900 Datasheet

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Full PDF Text Transcription (Reference)

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SPN4900 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  60V/5.3A,RDS(ON)=118mΩ@VGS=10V  60V/4.7A,RDS(ON)=125mΩ@VGS=4.