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SPN4920A
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.