SPN8812 Datasheet | SYNC POWER

DESCRIPTION The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8812 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - DC/DC Converter - Load Switch - SMPS Secondary Side Synchronous Rectifier - Motor Control - Power Tool FEATURES - 100V/63A,RDS(ON)=9.8mΩ@VGS=10V - 100V/63A,RDS(ON)=13.0mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) PART MARKING 2023/07/17 Ver 3 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8812DN8RGB PPAK5x6-8L ※ SPN8812DN8RGB : Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current (Silicon Limited) Pulsed Drain Current TC=25℃ TC=100℃ Single Pulse Avalanche Energy ( TC=25℃, L=0.1m H. ) Power Dissipation (TC=25℃) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to...