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SPN8810 - N-Channel MOSFET

General Description

The SPN8810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 100V/74A,RDS(ON)=8.0mΩ@VGS=10V.
  • 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

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Datasheet Details

Part number SPN8810
Manufacturer SYNC POWER
File Size 276.08 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8810 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN8810 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control 　 FEATURES  100V/74A,RDS(ON)=8.0mΩ@VGS=10V  100V/74A,RDS(ON)=10.5mΩ@VGS=4.